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? 2011 microchip technology inc. ds25006a-page 1 mcp14e6/7/8 features high peak output current: 2.0a (typical) independent enable function for each driver output wide input supply voltage operating range: - 4.5v to 18v low shoot-through/cross-conduction current in output stage high capacitive load drive capability: -t r : 12 ns with 1000 pf load (typical) -t f : 15 ns with 1000 pf load (typical) short delay times: 45 ns (typical) low supply current: - with logic 1 input/enable C 1 ma (typical) - with logic 0 input/enable C 300 a (typical) latch-up protected: passed jedec jesd78a logic input will withstand negative swing, up to 5v space-saving packages: - 8-lead soic, pdip, 6x5 dfn applications switch mode power supplies pulse transformer drive line drivers motor and solenoid drive general description the mcp14e6/7/8 devices are high-speed mosfet drivers, capable of providing 2.0a of peak current. the dual inverting, dual non-inverting and complementary outputs are directly controlled from either ttl or cmos (3v to 18v). these devices also feature low shoot-through current, fast rise/fall times and propagation delays, which make them ideal for high switching frequency applications. the mcp14e6/7/8 devices operate from a 4.5v to 18v single power supply and can easily charge and discharge 1000 pf of mosfet gate capacitance. they provide low enough impedances, in both the on and off states, to ensure the mosfets intended state will not be affected, even by large transients. the additional control of the mcp14e6/7/8 outputs is allowed by the use of separate enable functions. the enb_a and enb_b pins are active-high and are internally pulled up to v dd . the pins may be left floating for standard operation. the mcp14e6/7/8 dual output, 2.0a driver family is offered in both surface-mount and pin-through-hole packages with a -40 o c to +125 o c temperature rating. the low thermal resistance of the thermally enhanced dfn package allows greater power dissipation capability for driving heavier capacitive or resistive loads. these devices are highly latch-up resistant under any conditions within their power and voltage ratings. they are not subject to damage when up to 5v of noise spiking (of either polarity) occurs on the ground pin. the devices are fully latch-up protected when tested according to jedec jesd78a. all terminals are fully protected against electrostatic discharge (esd), up to 4 kv (hbm) or 400v (mm). 2.0a dual high-speed power mosfet driver with enable downloaded from: http:///
mcp14e6/7/8 ds25006a-page 2 ? 2011 microchip technology inc. package types functional block diagram (1) enb_a gnd in a in b v dd out b out a enb_b v dd out b out a enb_b v dd out b out a enb_b 6x5 dfn* 1 2 3 4 8 7 6 5 * includes exposed thermal pad (ep); see ta b l e 3 - 1 . ep 9 1 2 34 5 6 7 8 enb_a gnd in a v dd out b in b out a enb_b v dd out b out a enb_b v dd out b out a enb_b pdip, soic mcp14e6 mcp14e8 mcp14e7 mcp14e6 mcp14e8 mcp14e7 effective input c = 20 pf (each input) output input gnd v dd 4.7 v inverting non-inverting note 1: unused inputs should be grounded. enable v dd internal pull-up 4.7 v mcp14e6 dual inverting mcp14e7 dual non-inverting mcp14e8 one inverting, one non-inverting downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 3 mcp14e6/7/8 1.0 electrical characteristics absolute maximum ratings ? supply voltage ............................................... .................+20v input voltage ............................... (v dd + 0.3v) to (gnd C 5v) enable voltage .............................(v dd + 0.3v) to (gnd - 5v) input current (v in >v dd )................................................50 ma package power dissipation (t a = +50 o c) 8l-dfn ........................................................................ note 3 8l-pdip ........................................................................1.12w 8l-soic .....................................................................669 mw ? notice: stresses above those listed under "maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specifica- tion is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics (2) electrical specifications: unless otherwise indicated, t a = +25c, with 4.5v v dd 18v. parameters sym min typ max units conditions input logic 1 , high input voltage v ih 2.4 1.5 v logic 0 , low input voltage v il 1 . 30 . 8v input current i in -1 1 a 0v v in v dd input voltage v in -5 v dd + 0.3 v output high output voltage v oh v dd C 0.025 v dc test low output voltage v ol 0.025 v dc test output resistance, high r oh 58 i out = 10 ma, v dd = 18v output resistance, low r ol 58 i out = 10 ma, v dd = 18v peak output current i pk 2a v dd = 18v (2) switching time (1) rise time t r 1 23 0n s figure 4-1 , figure 4-2 , c l = 1000 pf fall time t f 1 53 5n s figure 4-1 , figure 4-2 , c l = 1000 pf propagation delay time t d1 4 55 5n s figure 4-1 , figure 4-2 propagation delay time t d2 4 55 5n s figure 4-1 , figure 4-2 enable function (enb_a, enb_b) high-level input voltage v en_h 2.4 1.6 v v dd = 12v, low-to-high transition low-level input voltage v en_l 1 . 20 . 8v v dd = 12v, high-to-low transition hysteresis v hyst 400 mv enable pull-up impedance r enbl 0.7 1.6 3.0 m v dd = 14v, enbl = gnd enable pin leakage current i enbl 1 0 a v dd =12v, enb_a = enb_b = gnd propagation delay time t d3 3 56 5n s v dd =12v, figure 4-3 propagation delay time t d4 3 56 5n s v dd =12v, figure 4-3 note 1: switching times are ensured by design. 2: tested during characterization, not production tested. 3: package power dissipation is dependent on the copper pad area of the pcb. downloaded from: http:///
mcp14e6/7/8 ds25006a-page 4 ? 2011 microchip technology inc. power supply supply voltage v dd 4.5 18.0 v supply current i dd 1000 1800 a v in_a =3v, v in_b =3v, enb_a = enb_b = high i dd 600 900 a v in_a =0v, v in_b =0v, enb_a = enb_b = high i dd 800 1600 a v in_a =3v, v in_b =0v, enb_a = enb_b = high i dd 800 1600 a v in_a =0v, v in_b =3v, enb_a = enb_b = high i dd 600 1000 a v in_a =3v, v in_b =3v, enb_a = enb_b = low i dd 300 450 a v in_a =0v, v in_b =0v, enb_a = enb_b = low i dd 500 800 a v in_a =3v, v in_b =0v, enb_a = enb_b = low i dd 500 800 a v in_a =0v, v in_b =3v, enb_a = enb_b = low dc characteristics (over operating temp. range) (2) electrical specifications: unless otherwise indicated, operating temperature range with 4.5v v dd 18v. parameters sym min typ max units conditions input logic 1 , high input voltage v ih 2.4 v logic 0 , low input voltage v il 0 . 8v input current i in -10 +10 a 0v v in v dd output high output voltage v oh v dd C 0.025 v dc test low output voltage v ol 0.025 v dc test output resistance, high r oh 81 1 i out = 10 ma, v dd = 18v output resistance, low r ol 81 1 i out = 10 ma, v dd = 18v switching time (1) rise time t r 2 33 5n s figure 4-1 , figure 4-2 , c l = 1000 pf fall time t f 2 34 0n s figure 4-1 , figure 4-2 , c l = 1000 pf propagation delay time t d1 5 06 5n s figure 4-1 , figure 4-2 propagation delay time t d2 5 06 5n s figure 4-1 , figure 4-2 note 1: switching times are ensured by design. 2: tested during characterization, not production tested. dc characteristics (2) (continued) electrical specifications: unless otherwise indicated, t a = +25c, with 4.5v v dd 18v. parameters sym min typ max units conditions note 1: switching times are ensured by design. 2: tested during characterization, not production tested. 3: package power dissipation is dependent on the copper pad area of the pcb. downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 5 mcp14e6/7/8 enable function (enb_a, enb_b) high-level input voltage v en_h 2.4 v v dd = 12v, low-to-high transition low-level input voltage v en_l 0 . 8v v dd = 12v, high-to-low transition hysteresis v hyst 0 . 4v enable pull-up impedance r enbl 0.7 1.6 3.0 m v dd =14v, enb_a = enb_b = gnd propagation delay time t d3 6 08 0n s v dd =12v, figure 4-3 propagation delay time t d4 7 08 5n s v dd =12v, figure 4-3 power supply supply voltage v dd 4.5 18.0 v supply current i dd 1400 2200 a v in_a =3v, v in_b =3v, enb_a = enb_b = high i dd 8 0 01 1 0 0 a v in_a =0v, v in_b =0v, enb_a = enb_b = high i dd 1300 2000 a v in_a =3v, v in_b =0v, enb_a = enb_b = high i dd 1300 2000 a v in_a =0v, v in_b =3v, enb_a = enb_b = high i dd 800 1200 a v in_a =3v, v in_b =3v, enb_a = enb_b = low i dd 500 600 a v in_a =0v, v in_b =0v, enb_a = enb_b = low i dd 600 900 a v in_a =3v, v in_b =0v, enb_a = enb_b = low i dd 600 900 a v in_a =0v, v in_b =3v, enb_a = enb_b = low temperature characteristics electrical specifications: unless otherwise noted, all parameters apply with 4.5v v dd 18v. parameters sym min typ max units conditions temperature ranges specified temperature range t a -40 +125 c maximum junction temperature t j + 1 5 0 c storage temperature range t a -65 +150 c package thermal resistances thermal resistance, 8l-6x5 dfn ja 35.7 c/w typical four-layer board with vias to ground plane thermal resistance, 8l-pdip ja 8 9 . 3 c / w thermal resistance, 8l-soic ja 1 4 9 . 5 c / w dc characteristics (over operating temp. range) (2) (continued) electrical specifications: unless otherwise indicated, operating temperature range with 4.5v v dd 18v. parameters sym min typ max units conditions note 1: switching times are ensured by design. 2: tested during characterization, not production tested. downloaded from: http:///
mcp14e6/7/8 ds25006a-page 6 ? 2011 microchip technology inc. notes: downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 7 mcp14e6/7/8 2.0 typical performance curves note: unless otherwise indicated, t a = +25c with 4.5v v dd 18v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: rise and fall times vs. temperature. figure 2-4: fall time vs. supply voltage. figure 2-5: fall time vs. capacitive load. figure 2-6: propagation delay vs. input amplitude. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0 20 40 60 80 100 120 140 160 4 6 8 1012141618 r i s e t i m e ( n s ) supply voltage (v) 6,800 pf 3,300 pf 2,200 pf 1,000 pf 470 pf rise time (ns) 0 20 40 60 80 100 120 140 160 1000 10000 capacitive load (pf) rise time (ns) 12v 18v 5v 10 15 20 25 30 35 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) time (ns) t fall t rise v dd = 18v c load = 1,000pf 0 20 40 60 80 100 120 140 160 180 4 6 8 1012141618 f a l l t i m e ( n s ) supply voltage (v) 6,800 pf 3,300 pf 2,200 pf 1,000 pf 470 pf fall time (ns) 0 20 40 60 80 100 120 140 160 180 1000 10000 capacitive load (pf) fall time (ns) 12v 18v 5v 40 45 50 55 60 456789101112 input amplitude (v) propagation delay (ns) t d2 v dd = 12v t d1 downloaded from: http:///
mcp14e6/7/8 ds25006a-page 8 ? 2011 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v v dd 18v. figure 2-7: propagation delay time vs. supply voltage. figure 2-8: quiescent current vs. supply voltage. figure 2-9: output resistance (output high) vs. supply voltage. figure 2-10: propagation delay time vs. temperature. figure 2-11: quiescent current vs. temperature. figure 2-12: output resistance (output low) vs. supply voltage. 30 40 50 60 70 80 90 100 4 6 8 1012141618 supply voltage (v) propagation delay (ns) t d1 t d2 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 4 6 8 1012141618 supply voltage (v) quiescent current (ma) input/enable = 1 input/enable = 0 1 3 5 7 9 11 13 4 6 8 10 12 14 16 18 supply voltage (v) r out-hi () t a = +125c t a = +25c v in = 0v (mcp14e6) v in = 5v (mcp14e7) 35 40 45 50 55 60 65 70 75 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) propagation delay (ns) t d2 t d1 t d2 t d1 v dd = 12v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) quiescent current (ma) input/enable = 1 input/enable = 0 v dd = 18v 2 4 6 8 10 12 14 16 4 6 8 10 12 14 16 18 supply voltage (v) r out-lo () t a = +125c t a = +25c v in = 5v (mcp14e6) v in = 0v (mcp14e7) downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 9 mcp14e6/7/8 note: unless otherwise indicated, t a = +25c with 4.5v v dd 18v. figure 2-13: supply current vs. capacitive load. figure 2-14: supply current vs. capacitive load. figure 2-15: supply current vs. capacitive load. figure 2-16: supply current vs. frequency. figure 2-17: supply current vs. frequency. figure 2-18: supply current vs. frequency. 0 20 40 60 80 100 120 140 160 1000 10000 capacitive load (pf) supply current (ma) 1000 khz 500 khz 100 khz 50 khz 200 khz v dd = 18v 0 20 40 60 80 100 1000 10000 capacitive load (pf) supply current (ma) 1000 khz 500 khz 100 khz 50 khz 200 khz v dd = 12v 0 5 10 15 20 25 30 35 40 45 50 1000 10000 capacitive load (pf) supply current (ma) 1000 khz 500 khz 100 khz 50 khz 200 khz v dd = 6v 0 10 20 30 40 50 60 70 80 90 100 10 100 1000 frequency (khz) supply current (ma) 6,800 pf 470 pf 3,300 pf 2,200 pf 1,000 pf v dd = 18v 0 10 20 30 40 50 60 70 80 10 100 1000 frequency (khz) supply current (ma) 6,800 pf 470 pf 2,200 pf 3,300 pf 1,000 pf v dd = 12v 0 5 10 15 20 25 30 35 40 10 100 1000 frequency (khz) supply current (ma) 6,800 pf 470 pf 2,200 pf 3,300 pf 1,000 pf v dd = 6v downloaded from: http:///
mcp14e6/7/8 ds25006a-page 10 ? 2011 microchip technology inc. note: unless otherwise indicated, t a = +25c with 4.5v v dd 18v. figure 2-19: input threshold vs. temperature. figure 2-20: input threshold vs. supply voltage. figure 2-21: enable threshold vs. temeprature. figure 2-22: enable hysteresis vs. temperature. figure 2-23: crossover energy vs. supply voltage. 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) input threshold (v) v hi v lo v dd = 18v 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 4 6 8 10 12 14 16 18 supply voltage (v) input threshold (v) v hi v lo 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) enable threshold (v) v en_l v en_h v dd = 12v 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) enable threshold (v) v dd = 12v hysteresis (v) 1.e-09 1.e-08 1.e-07 4 6 8 10 12 14 16 18 supply voltage(v) crossover energy (a*sec) note: the values in this graph represent the loss seen by both drivers in a package during a complete cycle. for a single driver, divide the stated value by 2. for a single transition of a single driver, divide the stated value by 4. downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 11 mcp14e6/7/8 3.0 pin descriptions the descriptions of the pins are listed in tab l e 3 - 1 . 3.1 enable a (enb_a) the enb_a pin is the enable control for output a. this enable pin is internally pulled up to v dd for active-high operation and can be left floating for standard opera- tion. when the enb_a pin is pulled below the enable pin, low level input voltage (v en_l ), output a will be in the off state, regardless of the input pin state. 3.2 control inputs a and b (in a; in b) the mosfet driver inputs are a high-impedance ttl/cmos compatible input. the inputs also have hysteresis between the high and low input levels, allowing them to be driven from slow rising and falling signals, and to provide noise immunity. 3.3 ground (gnd) ground is the device return pin. the ground pin should have a low-impedance connection to the bias supply source return. high peak currents will flow out the ground pin when the capacitive load is being discharged. 3.4 outputs a and b (out a; out b) outputs, a and b, are cmos push-pull outputs that are capable of sourcing and sinking 2.0a of peak current (v dd = 18v). the low output impedance ensures the gate of the mosfet will stay in the intended state, even during large transients. 3.5 supply input (v dd ) v dd is the bias supply input for the mosfet driver and has a voltage range of 4.5v to 18v. this input must be decoupled to ground with a local ceramic capacitor. this bypass capacitor provides a localized low- impedance path for the peak currents that are provided to the load. 3.6 enable b (enb_b) the enb_b pin is the enable control for output b. this enable pin is internally pulled up to v dd for active-high operation, and can be left floating for standard opera- tion. when the enb_b pin is pulled below the enable pin, low-level input voltage (v en_l ), output b will be in the off state, regardless of the input pin state. 3.7 exposed metal pad (ep) the exposed metal pad of the dfn package is not internally connected to any potential. therefore, this pad can be connected to a ground plane, or other cop- per plane on a printed circuit board, to aid in heat removal from the package. table 3-1: pin function table pdip, soic, 6x5 dfn symbol description mcp14e6 mcp14e7 mcp14e8 1 enb_a enb_a enb_a ouptut a enable 2 in a in a in a input a 3 gnd gnd gnd ground 4 in b in b in b input b 5o u t b out b out b output b 6v dd v dd v dd supply input 7o u t a out a out a output a 8 enb_b enb_b enb_b output b enable 9 ep ep ep exposed metal pad ( dfn package only ). exposed pad is electrically isolated. downloaded from: http:///
mcp14e6/7/8 ds25006a-page 12 ? 2011 microchip technology inc. notes: downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 13 mcp14e6/7/8 4.0 application information 4.1 general information mosfet drivers are high-speed, high-current devices which are intended to source/sink high-peak currents to charge/discharge the gate capacitance of external mosfets, or insulated gate bipolar transistors (igbts). in high-frequency switching power supplies, the pulse-width modulation (pwm) controller may not have the drive capability to directly drive the power mosfet. mosfet drivers, like the mcp14e6/7/8 family, can be used to provide additional source/sink current capability. an additional degree of control has been added to the mcp14e6/7/8 family. there are seperate enable func- tions for each driver that allow for the immediate termi- nation of the output pulse, regardless of the state of the input signal. 4.2 mosfet driver timing the ability of a mosfet driver to transition from a fully off state to a fully on state are characterized by the drivers rise time (t r ), fall time (t f ) and propagation delays (t d1 and t d2 ). the mcp14e6/7/8 family of drivers can typically charge and discharge a 1000 pf load capacitance, in approximately 12 ns, along with a typical matched propagation delay of 45 ns. figure 4-1 and figure 4-2 show the test circuit and timing waveform used to verify the mcp14e6/7/8 timing. figure 4-1: inverting driver timing waveform. figure 4-2: non-inverting driver timing waveform 4.3 enable function the enb_a and enb_b enable pins allow the indepen- dent control of out a and out b, respectively. they are active-high and are internally pulled up to v dd so that the default state is to enable the driver. these pins can be left floating for normal operation. when an enable pin voltage is above enable pin high threshold voltage, (v en_h ), that driver output is enabled and allowed to react to changes in the input pin volt- age state. similarly, when the enable pin voltage falls below the enable pin low threshold voltage, (v en_l ), that driver output is disabled and does not respond to the changes in the input pin voltage state. when the driver is disabled, the output goes to a low state. refer to tab l e 4 - 1 for enable pin logic. the threshold voltages of the enable function are compatible with logic levels. hysteresis is provided to help increase the noise immu- nity of the enable function, avoiding false triggers of the enable signal during driver switching. for robust designs, it is recommended that the slew rate of the enable pin signal be greater than 1v/ns. there are propagation delays associated with the driver receiving an enable signal and the output reacting. these propagation delays, t d3 and t d4 , are graphically represented in figure 4-3 . 0.1 f +5v 10% 90% 10% 90% 10% 90% 18v 1f 0v 0v c l = 1000 pf input input output t d1 t f t d2 output t r v dd = 18v ceramic c l = 1000 pf input output mcp14e6 ? mcp14e8 90% input t d1 t f t d 2 output t r 10% 10% 10% +5v 18v 0v 0v 90% 90% 0.1 f 1f c l = 1000 pf input output v dd =18v ceramic c l = 1000 pf input output mcp14e6 ? mcp14e8 downloaded from: http:///
mcp14e6/7/8 ds25006a-page 14 ? 2011 microchip technology inc. figure 4-3: enable timing waveform. 4.4 decoupling capacitors careful layout and decoupling capacitors are highly recommended when using mosfet drivers. large currents are required to charge and discharge capaci- tive loads quickly. for example, approximately 1.8a are needed to charge a 1000 pf load with 18v in 10 ns. to operate the mosfet driver over a wide frequency range, with low supply impedance, a ceramic and low- esr film capacitors are recommended to be placed in parallel between the driver, v dd and gnd. a 1.0 f low-esr film capacitor and a 0.1 f ceramic capacitor placed between pins, 6 and 3, should be used. these capacitors should be placed close to the driver to mini- mize the circuit board parasitics and provide a local source for the required current. 4.5 pcb layout considerations proper pcb layout is important in a high-current, fast switching circuit to provide proper device operation and robustness to the design. the pcb trace loop area and inductance should be minimized by the use of ground planes or trace under mosfet gate drive signals, sep- arate analog and power grounds, and local driver decoupling. placing a ground plane beneath the mcp14e6/7/8 will help as a radiated noise shield, as well as providing some heat sinking for power dissipated within the device. 4.6 power dissipation the total internal power dissipation in a mosfet driver is the summation of three separate power dissipation elements ( figure 4-1 ). equation 4-1: 4.6.1 capacitive load dissipation the power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load and supply voltage. the power lost in the mosfet driver for a complete charging and discharging cycle of a mosfet is: equation 4-2: table 4-1: enable pin logic mcp14e6 mcp14e7 mcp14e8 enb_a enb_b in a in b out a out b out a out b out a out b hhhhl lhhlh hhhl lhhl l l hhlhhl lhhh hhl lhhl lhl llxxllllll 5v0v enb_xv dd 0v out x v en_h v en_l 90% 10% t d3 t d4 p t p l p q p cc ++ = where: p t = total power dissipation p l = load power dissipation p q = quiesent power dissipation p cc = operating power dissipation p l fc t v dd 2 = where: f = switching frequency c t = total load capacitance v dd = mosfet driver supply voltage downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 15 mcp14e6/7/8 4.6.2 quiescent power dissipation the power dissipation associated with the quiescent current draw depends upon the state of the input pin. the mcp14e6/7/8 devices have a quiescent current draw with a logic ' 1 ' on the input pin of 1 ma (typical) and 300 a (typical) with a logic ' 0 '. the quiescent power dissipation is: equation 4-3: 4.6.3 operating power dissipation the operating power dissipation occurs each time the mosfet driver output transitions, because for a very short period of time, both mosfets in the output stage are on, simultaneously. this cross-conduction current leads to a power dissipation described as: equation 4-4: p q i qh di ql 1d ? () + () v dd = where: i qh = quiescent current in the high state d = duty cycle i ql = quiescent current in the low state v dd = mosfet driver supply voltage p cc cc f v dd = where: cc = cross-conduction constant (a * sec) f = switching frequency v dd = mosfet driver supply voltage downloaded from: http:///
mcp14e6/7/8 ds25006a-page 16 ? 2011 microchip technology inc. notes: downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 17 mcp14e6/7/8 5.0 packaging information 5.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e xxxxxxx 8-lead dfn-s (5x6x1 mm) xxxxxxx yyww nnn mcp14e6 example e/mf^^ 1111 256 xxxxxnnn 8-lead pdip xxxxxxxx yyww e/p^^ 256 example mcp14e6 1111 8-lead soic (.150) xxxxxxxx xxxxyyww nnn example mcp14e6e sn^^ 1111 256 3 e 3 e 3 e downloaded from: http:///
mcp14e6/7/8 ds25006a-page 18 ? 2011 microchip technology inc. note 2 a1 a a3 note 1 12 e n d exposed pad note 1 2 1 e2 l n e b k bottom view top view d2 downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 19 mcp14e6/7/8 note 2 a3 a2 a1 a note 1 note 1 exposed pad bottom view 1 2 d2 2 1 e2 k l n e b e e1 d d1 n top view downloaded from: http:///
mcp14e6/7/8 ds25006a-page 20 ? 2011 microchip technology inc. downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 21 mcp14e6/7/8 n e1 note 1 d 12 3 a a1 a2 l b1 b e e eb c downloaded from: http:///
mcp14e6/7/8 ds25006a-page 22 ? 2011 microchip technology inc. note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 23 mcp14e6/7/8 note: for the most current package drawings, please see the microchip packaging specification located at http://www.microchip.com/packaging downloaded from: http:///
mcp14e6/7/8 ds25006a-page 24 ? 2011 microchip technology inc. downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 25 mcp14e6/7/8 appendix a: revision history revision a (march 2011) original release of this document. downloaded from: http:///
mcp14e6/7/8 ds25006a-page 26 ? 2011 microchip technology inc. notes: downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 27 mcp14e6/7/8 product identification system to order or obtain information, e. g., on pricing or delivery, refer to the factory or the listed sales office . part no. - x /xx package temperature range device device: mcp14e6: 2.0a dual mosfet driver, inverting mcp14e6t: 2.0a dual mosfet driver, inverting, tape and reel (dfn and soic only) mcp14e7: 2.0a dual mosfet driver, non-inverting mcp14e7t: 2.0a dual mosfet driver, non-inverting, tape and reel (dfn and soic only) mcp14e8: 2.0a dual mosfet driver, complementary mcp14e8t: 2.0a dual mosfet driver, complementary, tape and reel (dfn and soic only) temperature range: e = -40c to +125c package: * mf = dual, flat, no lead (6x5 mm body), 8-lead p = plastic dip, (300 mil body), 8-lead sn = plastic soic (150 mil body), 8-lead examples: a) mcp14e6-e/mf: 2.0a dual inverting mosfet driver, extended temperature, 8ld 6x5 dfn package. b) mcp14e6t-e/mf: 2.0a dual inverting mosfet driver, extended temperature, tape and reel 8ld 6x5 dfn package. c) mcp14e6-e/p: 2.0a dual inverting mosfet driver, extended temperature, 8ld pdip package. d) mcp14e6-e/sn: 2.0a dual inverting mosfet driver, extended temperature, 8ld soic package. e) mcp14e6t-e/sn: 2.0a dual inverting mosfet driver, tape and reel, extended temperature, 8ld soic package. a) mcp14e7-e/mf: 2.0a dual inverting mosfet driver, extended temperature, 8ld 6x5 dfn package. b) mcp14e7-e/p: 2.0a dual inverting mosfet driver, extended temperature, 8ld pdip package. c) mcp14e7-e/sn: 2.0a dual inverting mosfet driver, extended temperature, 8ld soic package. a) mcp14e8-e/mf: 2.0a dual inverting mosfet driver, extended temperature, 8ld 6x5 dfn package. b) mcp14e8-e/p: 2.0a dual inverting mosfet driver, extended temperature, 8ld pdip package. c) mcp14e8-e/sn: 2.0a dual inverting mosfet driver, extended temperature, 8ld soic package. downloaded from: http:///
mcp14e6/7/8 ds25006a-page 28 ? 2011 microchip technology inc. notes: downloaded from: http:///
? 2011 microchip technology inc. ds25006a-page 29 information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safety applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting from such use. no licenses are conveyed, implicitly or otherwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, pic 32 logo, rfpic and uni/o are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, hampshire, hi-tech c, linear active thermistor, mxdev, mxlab, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, appl ication maestro, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, hi-tide, in-circuit serial programming, icsp, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, omniscient code generation, picc, picc-18, picdem, picdem.net, pickit, pictail, real ice, rflab, select mode, total endurance, tsharc, uniwindriver, wiperlock and zena are trademarks of microchip tec hnology incorporated in the u.s.a. and other countries. sqtp is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2011, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. isbn: 978-1-61341-023-3 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are co mmitted to continuously improvin g the code protection features of our products. attempts to break microchips code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory an d analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. downloaded from: http:///
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